Vertical 1200℃ Thermodiffusion Furnace
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Vertical 1200℃ Thermodiffusion Furnace |
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Model |
Vertical 1200℃ Thermodiffusion Furnace |
Rating |
Φ3 AC 400V 50KVA |
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Weight(KG) |
2000KG |
L*W*H(mm) |
3870x1000x3200 mm |
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Service Life(Years) |
20 Years |
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Purpose |
The machine is designed for high-temperature thermal treatment of silicon wafers with a diameter of 200 mm in order to obtain profiles of alloying impurities and oxidation of the silicon surface. |
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Main Characteristic |
1.High-temperature operation: Diffusion furnaces typically operate at high temperatures to facilitate the diffusion of impurities in semiconductor materials. For example, their operating temperature range is usually between 600-1200℃. 2.Precise temperature control: To ensure the accuracy and consistency of the process, diffusion furnaces require precise temperature control. The precision of the constant temperature zone can reach ±0.5℃, and they have functions for automatic ramp-up and ramp-down as well as constant temperature. 3.Atmosphere control: The atmosphere control inside the diffusion furnace is crucial to ensure the effectiveness of impurity doping and crystal quality. Operations are typically conducted in a vacuum or inert gas environment to prevent contamination from impurities. 4.Batch processing capability: Diffusion furnaces are designed to process a large number of substrates, making them suitable for mass production. For example, horizontal diffusion furnaces can accommodate multiple process tubes, thereby achieving efficient batch processing. |
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